the magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. the magnetoresistance is calculated in the ballistic regime, within the landauer-büttiker formalism. it has been demonstrated that the conductance of a magnetic nanowire with double domain walls can ...

With a brief introduction to ballistic phenomenon, the theory, fabrication, working and plausible applications of some ballistic devices are presented. Index – Heterostructure semiconductor, 2DEG, Electron Mobility, Mesoscopic Structure, Ballistic Transport, Ballistic Devices

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have bee...

Articles you may be interested in High-field transport in a graphene nanolayer Effects of dimensionality on the ballistic phonon transport and thermal conductance in nanoscale structures Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors Appl. Using the Landauer approach for carrier transport, we a...

We present the first attempt of charge carrier transport modeling in III-nitride multipleQW light-emitting diode structures which takes into consideration ballistic overshoot of the device active region. For the purpose of this study, the drift-diffusion based Transport module of our software package has been complemented by a simple model of ballistic carrier transport which proved to be essen...

We present an analytical model for nanoscale MOSFETs capable to describe the transition from drift-diffusion to ballistic transport. We start from a closed-form model of ballistic Fully Depleted SOI (FDSOI) and Double Gate (DG) MOSFETs with non degenerate statistics, and, on the basis of the Büttiker interpretation of dissipative transport in terms of virtual voltage probes, we show that a long...

Future MOS transistors may operate near their ballistic limits [1], so it is important to understand ballistic device physics and the prospects for achieving quasi-ballistic operation. In this paper, we explore the device design and physics issues of MOSFETs at the scaling limits using semiclassical and full quantum simulations. The device we presume is a double-gate (DG) MOSFET with symmetrica...

We explore electrically injected, spin-polarized transport in a ballistic two-dimensional electron gas. We augment the Büttiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode reservoir-to-reservoir transport of ballistic spin-1/2 particles. Clear and unambiguous signatures of spin transport are established in this regime, for the simplest m...